Kioxia Corporation , a world leader in memory solutions, today announced the start of shipments of 1 Tb (terabit) Triple-Level Cell (TLC) memory devices incorporating its ninth-generation 3D BiCS FLASH™ flash memory technology . The devices are designed to meet the needs of high-performance, low- to mid-level storage capacity applications in PCs and smartphones with artificial intelligence (AI) capabilities.
Kioxia continues to pursue a dual-axis strategy based on its innovative CMOS technology, directly bonded to the matrix (CBA) 2 , and On-Pitch Select Gate Drain (OPS) 3 technology . Within this strategy, the company is developing two distinct product lines: 9th generation solutions, which offer high performance at a relatively low cost, and 10th generation technology, which leverages advanced layer stacking to achieve massive capacity and superior performance.
Developed through a 230-layer stacking process based on 8th generation BiCS FLASH™ technology and advanced CMOS technology, the new 9th generation 1 Tb TLC BiCS FLASH™ devices offer a NAND interface speed of 4.8 Gb/s, representing a 33% improvement over 8th generation devices, matching the performance of 10th generation devices 4 .
Guided by its mission to “uplift the world with ‘memory'”, Kioxia remains committed to driving technological innovation, strengthening global partnerships, and providing advanced storage solutions that power modern AI infrastructure.
- These samples are produced to verify functionality; actual specifications may differ in mass production.
- Technology in which each CMOS wafer and each cell array wafer are manufactured separately, under individually optimized conditions, and then joined together. This technology has been adopted since the 8th generation BiCS FLASH™ products.
- Technology that allows for shortening the bit line and reducing word line capacitance by removing unused memory holes. This technology has been used since the 8th generation BiCS FLASH™ products.
- 1 Gb/s is calculated as 1,000,000,000 bits per second. This value was obtained in a specific test environment at Kioxia Corporation; results may vary in real-world use depending on usage conditions.
Notes:
*Product density is defined based on the density of the memory chip(s) contained within it, and not on the memory capacity available for the end user to store data. Consumer-usable capacity will be less due to data control areas, formatting, bad blocks, and other limitations, and may also vary depending on the host device and application. For more details, please refer to the product specifications. 1 GB = 2³⁰ bits = 1,073,741,824 bits.
*Read and write speeds shown are the best obtained in a specific test environment at Kioxia Corporation. The company does not guarantee that these speeds will be achieved on individual devices. Read and write speeds may vary depending on the device used.
*Company, product, and service names may be trademarks of third parties.
*This communication is prepared to provide information about our business and does not constitute, nor form part of, an offer or invitation to sell, nor a solicitation of an offer to buy, subscribe for, or otherwise acquire any securities in any jurisdiction, nor does it constitute an incentive to engage in investment activities, nor will it serve as a basis for or be used as a reference in relation to any resulting contract.
*The information contained in this document, including product prices and specifications, service content, and contact information, is correct as of the date of this communication but is subject to change without notice.
About Kioxia
Kioxia is a world leader in memory solutions, dedicated to the development, production, and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to upgrading the world with “memory,” offering products, services, and systems that create choice for customers and memory-based value for society. Kioxia’s innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers, and generative AI systems.
The original language text of this announcement is the official, authorized version. Translations are provided for convenience only and should be referred to the original language text, which is the only legally binding version.
Source link:https://www.businesswire.com/
